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Effect of step sintering on breakdown voltage of varistors prepared from nanomaterials by sol gel route

机译:逐步烧结对溶胶凝胶法纳米材料压敏电阻击穿电压的影响

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摘要

ZnO varistor materials were prepared by a sol gel route with subsequent drying and calcination.Varistor discs fabricated from these materials were subjected to a two step sintering schedule.Therefore in a typical experiment, the samples were heated to 1000uC, then allowed to cool for over30 min to 900uC and held there for 6 h. The results were compared with commercial varistor samplessintered in a similar way. Considerably higher breakdown voltages were obtained for the varistorsmadefrom nanosample (1192¡30 V mm21) compared with the commercial samples (723 ¡30 V mm21)sintered under the same experimental conditions. The sintered materials were characterised by X-raydiffraction (XRD), field emission scanning electron microscopy (FESEM) and density measurements.
机译:通过溶胶凝胶法制备ZnO压敏电阻材料,然后进行干燥和煅烧,然后将由这些材料制成的压敏电阻圆片进行两步烧结,因此在典型的实验中,将样品加热至1000uC,然后冷却30多个分钟至900uC,并保持6小时。将结果与以类似方式烧结的商业压敏电阻样品进行比较。与在相同实验条件下烧结的商用样品(723〜30 V mm21)相比,纳米样品(1192〜30 V mm21)制成的压敏电阻具有更高的击穿电压。通过X射线衍射(XRD),场发射扫描电子显微镜(FESEM)和密度测量来表征烧结材料。

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